Display apparatus and method of manufacturing the same

ABSTRACT

A display apparatus includes a base substrate including a display area and a peripheral area, a conductive layer formed on the base substrate in an entirety of the peripheral area and the display area, a buffer layer on the conductive layer, a thin film transistor on the buffer layer in the display area, an electrode in a contact hole that is formed through the buffer layer to expose a side surface of the conductive layer in the peripheral area, the electrode making contact the conductive layer, an insulating pattern in the contact hole on the electrode, and a wiring on the insulating pattern and electrically connected to the electrode.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This is a divisional application of U.S. patent application Ser. No.16/592,138, filed Oct. 3, 2019 (now pending), the disclosure of which isincorporated herein by reference in its entirety. U.S. patentapplication Ser. No. 16/592,138 claims priority to and benefit of KoreanPatent Application No. 10-2018-0149132 under 35 U.S.C. § 119, filed onNov. 28, 2018 in the Korean Intellectual Property Office, the entirecontents of which are incorporated herein by reference.

BACKGROUND 1. Field

Embodiments relate to a display apparatus and a method of manufacturingthe display apparatus.

2. Description of the Related Art

Recently, a display apparatus having light weight and small size hasbeen manufactured. A cathode ray tube (CRT) display apparatus has beenused due to a performance and a competitive price. The CRT displayapparatus may be limited as to size or portability. Therefore, a displayapparatus such as a plasma display apparatus, a liquid crystal displayapparatus, and an organic light emitting display apparatus has beenhighly regarded due to small size, light weight, andlow-power-consumption.

SUMMARY

Embodiments are directed to a display apparatus, including a basesubstrate including a display area and a peripheral area, a conductivelayer formed on the base substrate in an entirety of the peripheral areaand the display area, a buffer layer on the conductive layer, a thinfilm transistor on the buffer layer in the display area, an electrode ina contact hole that is formed through the buffer layer to expose a sidesurface of the conductive layer in the peripheral area, the electrodemaking contact the conductive layer, an insulating pattern in thecontact hole on the electrode, and a wiring on the insulating patternand electrically connected to the electrode.

The electrode may be coupled to a ground voltage or a constant voltage.

The peripheral area may include a pad area in which a pad portionelectrically connected to a driving unit is disposed, and a folding areabetween the pad portion and the display area, and the contact hole maybe in the folding area.

The buffer layer may not be present in the folding area.

The insulating pattern may cover a portion where the buffer layer is notpresent in the folding area.

The conductive layer may be an n+ doped amorphous silicon layer.

The base substrate may include a first polyimide layer, a barrier filmlayer on the first polyimide layer, and a second polyimide layer on thebarrier film layer.

The base substrate may further include a second conductive layerdisposed between the barrier film layer and the second polyimide layeror between the barrier film layer and the first polyimide layer, and thesecond conductive layer may be exposed by the contact hole, and thesecond conductive layer may contact the electrode.

The base substrate may include a first polyimide layer, a barrier filmlayer on the first polyimide layer, and a second polyimide layer on thebarrier film layer, and the conductive layer may be disposed between thebarrier film layer and the second polyimide layer or between the barrierfilm layer and the first polyimide layer.

The contact hole may be formed through the conductive layer so as exposea side surface of the conductive layer, and the side surface of theconductive layer may contact the electrode.

The contact hole may be formed by removing a portion of the basesubstrate.

The thin film transistor may include an active pattern, a gateelectrode, a source electrode and a drain electrode, and the displayapparatus may further include a gate insulating layer disposed betweenthe active pattern and the gate electrode, and an interlayer insulatinglayer between the gate electrode and the source and drain electrodes.

The display apparatus may further include a via insulating layer on thesource and drain electrode, a first electrode on the via insulatinglayer and electrically connected to the drain electrode, a lightemitting layer on the first electrode, and a second electrode on thelight emitting layer.

The via insulating layer may cover the wiring.

The electrode may extend to an upper surface of the interlayerinsulating layer, and the wiring may contact the electrode on theinterlayer insulating layer.

Embodiments are also directed to a method of manufacturing a displayapparatus, the method including forming a conductive layer on a basesubstrate, forming a buffer layer on the conductive layer, forming anactive pattern on the buffer layer, forming an insulating layer on theactive pattern, forming a contact hole by partially removing theinsulating layer and the buffer layer to expose the conductive layer,forming an electrode that contacts the conductive layer in the contacthole, forming an insulating pattern on the electrode so as to expose aportion of the electrode, and forming a wiring electrically connected tothe electrode on the insulating pattern.

The conductive layer may be an n+ doped amorphous silicon layer.

The method may further include forming a gate electrode on theinsulating layer before forming the contact hole, and forming aninterlayer insulating layer on the gate electrode. In forming thecontact hole, the contact hole may be formed by partially removing theinterlayer insulating layer, the insulating layer, and the buffer layer.

In forming the contact hole, a portion of the conductive layer may beremoved to form the contact hole, and a side surface of the conductivelayer may be exposed, and the side surface of the conductive layer maycontact the electrode.

The base substrate may include at least one polyimide layer and at leastone barrier film layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail example embodiments with reference to the attached drawings inwhich:

FIG. 1 illustrates a plan view illustrating a display apparatusaccording to an example embodiment;

FIG. 2 illustrates a cross-sectional view taken along a line I-I′ ofFIG. 1;

FIG. 3 illustrates a cross-sectional view taken along a line II-II′ ofFIG. 1;

FIG. 4 illustrates a cross-sectional view of a display apparatusaccording to an example embodiment;

FIG. 5 illustrates a cross-sectional view of a display apparatusaccording to an example embodiment;

FIG. 6 illustrates a cross-sectional view of a display apparatusaccording to an example embodiment;

FIG. 7 illustrates a cross-sectional view of a display apparatusaccording to an example embodiment;

FIG. 8 illustrates a cross-sectional view of a display apparatusaccording to an example embodiment;

FIGS. 9A to 9I illustrate cross-sectional views of the displayapparatuses of FIGS. 1 to 3;

FIG. 10 illustrates a block diagram of an electronic device according toan example embodiment;

FIG. 11A illustrates a diagram of an example in which the electronicdevice of FIG. 10 is implemented as a television; and

FIG. 11B illustrates a diagram of an example in which the electronicdevice of FIG. 10 is implemented as a smart phone.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings; however, they may be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey example implementations to those skilled in the art. In thedrawing figures, the dimensions of layers and regions may be exaggeratedfor clarity of illustration. Like reference numerals refer to likeelements throughout.

FIG. 1 is a plan view illustrating a display apparatus according to anexample embodiment.

Referring to FIG. 1, the display apparatus may include a display area DAin which an image is displayed, a peripheral area PA surrounding thedisplay area DA, a pad area PAa, and a folding area FA.

The display area may be on a plane formed by a first direction D1 and asecond direction D2 perpendicular to the first direction D1. The displayapparatus may include a plurality of pixels in the display area DA. Thedisplay apparatus may further include a driving unit in the peripheralarea PA for driving the pixels, a power supply unit for supplying powerto the pixels, and a wiring unit for connecting the pixels and thedriving unit.

Each of the pixels may be provided as a minimum unit for displaying animage. The pixels may include a display element for emitting colorlight. For example, the display element may be a liquid crystal displaydevice (LCD), an electrophoretic display device (EPD device), anelectrowetting display device (EWD device), or an organic light emittingdisplay device (OLED device). For convenience of explanation, theorganic light emitting display apparatus will be described as an exampleof the display element.

Each pixel may emit one of red, green, and blue colors, for example.Each of the pixels may emit colors such as cyan, magenta, yellow, andwhite, for example. These pixels will be described below in detail withreference to FIGS. 2 and 3.

The peripheral area PA may include the pad area PAa in which the padportion PAD (to which the driving unit is connected) is disposed and thefolding area FA disposed between the pad part PAD and the display areaDA where the display apparatus is foldable. The folding area FA and thepad area PAa may extend in the first direction D1, respectively.

An electrode GD may be in the folding area FA. The electrode GD mayapply a constant voltage such as a ground voltage to a conductive layeron a base substrate. Thus, it may be possible to prevent a change incharacteristics of the thin film transistor in the pixel due to anexternal factor (shield effect). A detailed description thereof will bedescribed below with reference to FIGS. 2 and 3.

FIG. 2 is a cross-sectional view taken along a line I-I′ of FIG. 1. FIG.3 is a cross-sectional view taken along a line II-II′ of FIG. 1.

Referring to FIGS. 2 and 3, the display apparatus may include a basesubstrate 100, a conductive layer 108, a buffer layer 110, an activepattern ACT, a gate insulating layer 120, a gate pattern, an interlayerinsulating layer 130, an electrode GD, an insulating pattern 135, a datapattern, a via insulating layer 140, a pixel defining layer PDL, and athin-film encapsulation layer TFE.

The base substrate 100 may include transparent or opaque insulationmaterials. For example, the base substrate 100 may include a quartzsubstrate, a synthetic quartz substrate, a calcium fluoride substrate, afluoride-doped quartz substrate, a sodalime glass substrate, anon-alkali glass substrate etc. In another implementation, the basesubstrate 100 may include a flexible transparent material such as aflexible transparent resin substrate, e.g., a polyimide substrate. Thepolyimide substrate may include a first polyimide layer 102, a barrierfilm layer 104, a second polyimide layer 106, etc. For example, thepolyimide substrate may have a configuration where the first polyimidelayer 102, the barrier film layer 104, and the second polyimide layer106, are stacked on a rigid glass substrate.

The conductive layer 108 may be on the base substrate 100. Theconductive layer 108 may be formed corresponding to an entirety of thedisplay area DA and the peripheral area PA, and may be configured toapply a ground voltage or a constant voltage. For example, theconductive layer 108 may be an n+ doped amorphous silicon (a-Si) layer.

The buffer layer 110 may be on the conductive layer 108. The bufferlayer 110 may be on the entire base substrate 100. The buffer layer 110may prevent the diffusion of metal atoms and/or impurities from thesubstrate 100 and the conductive layer 108 into the active pattern ACT.In addition, the buffer layer 110 may control a rate of heat transfer ina crystallization process for forming the active pattern ACT, which mayhelp provide uniformity to the active pattern ACT.

The active pattern ACT may be in the display area DA on the buffer layer110. The active pattern ACT may include amorphous silicon orpolycrystalline silicon. In another embodiment, the active pattern ACTmay include an oxide semiconductor. The active pattern ACT may include adrain region D and a source region S doped with impurities, and achannel region C between the drain region D and the source region S.

The gate insulating layer 120 may be on the buffer layer 110 on whichthe active pattern ACT is disposed. The gate insulating layer 120 maycover the active pattern ACT on the buffer layer 110 and may be formedat substantially the same thickness along the profile of the activepattern ACT. The gate insulating layer 120 may include an inorganicinsulating material such as a silicon compound or a metal oxide.

The gate pattern may be on the gate insulating layer 120. The gatepattern may include a signal line such as a gate line and a gateelectrode GE to overlap with the active pattern ACT. The gate patternmay be formed using a metal, an alloy, a metal nitride, a conductivemetal oxide, a transparent conductive material, or the like.

The interlayer insulating layer 130 may be on the gate insulating layer120 on which the gate pattern is disposed. For example, the interlayerinsulating layer 130 may sufficiently cover the gate pattern on the gateinsulating layer 120, and may have a substantially flat upper surfacewithout forming a step around the gate pattern. In anotherimplementation, the interlayer insulating layer 130 may cover the gatepattern on the gate insulating layer 120 and may be formed atsubstantially the same thickness along the profile of the gate pattern.The interlayer insulating layer 130 may include a silicon compound, ametal oxide, or the like. The interlayer insulating layer 130 may beformed of a plurality of layers.

In the folding area FA of the peripheral region PA, the interlayerinsulating layer 130, the gate insulating layer 120, and the bufferlayer 110 may not be formed. Thus, the interlayer insulating layer 130,the gate insulating layer 120, and the buffer layer 110 may not beformed in the folding area FA, or may be removed in the folding area FA.The folding area FA is a folded part in the final product. If theinterlayer insulating layer 130, the gate insulating layer 120, and thebuffer layer 110 which are inorganic films, is formed in the foldingarea FA, damage to the interlayer insulating layer 130, the gateinsulating layer 120, and the buffer layer 110, such as cracks, mayoccur when the display apparatus is folded in the folding portion FA.

In removing the inorganic films, a portion of the base substrate may beremoved. For example, a portion of the second polyimide layer 106 in thefolding area FA may be removed. Thus, a contact hole may be formed toexpose the conductive layer 108 through the interlayer insulating layer130, the gate insulating layer 120, and the buffer layer 110.

The electrode GD may be disposed within the contact hole in the foldingarea FA. Thus, the electrode GD may be in the contact hole, whichexposes a side surface of the conductive layer 108, to be contacted withthe side surface of the conductive layer 108 (side contact). Thus, thecontact hole may be formed through the conductive layer 108 such thatthe side of the conductive layer 108 is exposed by the contact hole, andthe side of the conductive layer 108 may be in contact the electrode GD.The electrode GD may be formed to extend to an upper surface of theinterlayer insulating layer 130 and may be in contact with a wiring GL(to be described below) at a portion that is exposed by the insulatingpattern 135 on the interlayer insulating layer 130. The electrode GD maybe formed using a metal, an alloy, a metal nitride, a conductive metaloxide, a transparent conductive material, or the like.

In an implementation, the contact hole may be formed only up to thebuffer layer 110, so that the conductive layer 108 is not removed, andthe electrode GD may contact the upper surface of the conductive layer108.

A ground voltage or a constant voltage may be applied to the electrodeGD. The conductive layer 108 electrically connected to the electrode GDmay overlap with the thin film transistor TFT including the activepattern ACT and the gate electrode GE. Thus, the thin film transistorTFT may be prevented from being affected by external influences, such asstatic electricity, flowing from the base substrate 100 (shieldingeffect). The conductive layer 108 electrically connected to theelectrode GD may overlap with the thin film transistor TFT including theactive pattern ACT and the gate electrode GE, and may be disposedbetween the thin film transistor TFT and the base substrate 100. Thus,it may be possible to prevent a change in the characteristics of thethin film transistor TFT from external influences (such as staticelectricity) flowing from the base substrate 100 (shielding effect).

The insulating pattern 135 may be in the contact hole. Thus, theinsulating pattern 135 may be formed corresponding to the portion inwhich the interlayer insulating layer 130, the gate insulating layer120, and the buffer layer 110 are removed. The insulating pattern 135may be formed to reduce a step with the interlayer insulating layer 130in the folding area FA. In the drawing, for understanding, a step isshown as being formed with the interlayer insulating layer 130, althoughthe step may be minimized in practice. The insulating pattern 135 mayinclude an organic insulating material and may not be easily damagedeven when the folding area FA is folded.

The data pattern may be on the interlayer insulating layer 130 on whichthe insulating pattern 135 is disposed. The data pattern may include asource electrode SE and a drain electrode DE of the thin film transistorTFT, and a signal line SL such as the wiring GL, and a data line. Thedata pattern may be formed using a metal, an alloy, a metal nitride, aconductive metal oxide, a transparent conductive material, or the like.For example, the data pattern may be formed of a metal such as copper,aluminum or the like having high conductivity. The data pattern may havea plurality of layered structures. For example, the data pattern mayinclude a titanium layer, an aluminum layer on the titanium layer, andtitanium on the aluminum layer.

The wiring GL may extend in the second direction (refer to D2 in FIG. 1)in the peripheral region PA, and may intersect the insulating pattern135. The wiring GL may be configured to apply a ground voltage. Forexample, the wiring GL may extend to the pad area PAa and may beconnected to a ground terminal PE_G of the pad portion (refer to PAD inFIG. 1) to receive the ground voltage from the driving unit. Inaddition, the wiring GL may extend to the display area DA to supply theground voltage to the pixel structure.

The via insulating layer 140 may be on the thin film transistor TFT. Thevia insulating layer 140 may be on the thin film transistor TFT. The viainsulating layer 140 may cover the wiring GL. The via insulating layer140 may be formed in a single layer structure, but may be formed in amulti-layer structure including at least two insulating layers. The viainsulating layer 140 may be formed using an organic material such as aphotoresist, an acrylic resin, a polyimide resin, a polyamide resin, ora siloxane-based resin.

The light emitting structure 180 may include a first electrode 181, alight emitting layer 182, and a second electrode 183.

The first electrode 181 may be on the via insulating layer 140. Thefirst electrode 181 may include a reflective material or a transmissivematerial in accordance with the emission type of the display apparatus.In an example embodiment, the first electrode 181 may have a singlelayer structure or a multi-layer structure, which may include a metalfilm, an alloy film, a metal nitride film, a conductive metal oxidefilm, and/or a transparent conductive film.

The pixel defining layer PDL may be on the via insulating layer 140 onwhich the first electrode 181 is disposed. The pixel defining layer PDLmay be formed using an organic material. For example, the pixel defininglayer PDL may include a photoresist, an acryl-based resin, apolyimide-based resin, a polyamide-based resin, a siloxane-based resin,etc. In an example embodiment, an opening which exposes the firstelectrode 181 may be formed by etching the pixel defining layer PDL. Anemitting area and a non-emitting area of the display apparatus may bedefined by the opening of the pixel defining layer PDL. For example, aportion where the opening of the pixel defining layer PDL is located maycorrespond to an emitting area, and a non-emitting area may correspondto a portion adjacent to the opening of the pixel defining layer PDL.

The light emitting layer 182 may be on the first electrode 181 exposedthrough the opening of the pixel defining layer PDL. In addition, thelight emitting layer 182 may extend on a sidewall of the opening of thepixel defining layer PDL. In an example embodiment, the light emittinglayer 182 may include an organic light emitting layer (EL), a holeinjection layer (HIL), a hole transfer layer (HTL), an electron transferlayer (ETL), an electron injection layer (EIL), etc. In an exampleembodiment, the hole injection layer, the hole transport layer, theelectron transport layer, and the electron injection layer may be formedin common to correspond to a plurality of pixels. In an exampleembodiment, a plurality of organic light emitting layers may be formedusing light emitting materials for generating different colors of lightsuch as a red color of light, a green color of light and a blue color oflight in accordance with color pixels of the display device. In anexample embodiment, the organic light emitting layer of the of the lightemitting layer 182 may include a plurality of stacked light emittingmaterials for generating a red color of light, a green color of lightand a blue color of light to thereby emitting a white color of light.Elements of the light emitting layer 182 may be commonly formed so as tocorrespond to a plurality of pixels, and each pixel may be divided by acolor filter layer.

The second electrode 183 may be on the pixel defining layer PDL and thelight emitting layer 182. The second electrode 183 may include atransmissive material or a reflective material in accordance with theemission type of the display device. In an example embodiment, thesecond electrode 183 may have a single layer structure or a multi-layerstructure, which may include a metal film, an alloy film, a metalnitride film, a conductive metal oxide film, and/or a transparentconductive film.

The thin film encapsulation layer TFE may be on the second electrode183. The thin film encapsulation layer TFE may prevent penetration ofmoisture and oxygen from outside. The thin film encapsulation layer TFEmay include at least one organic layer and at least one inorganic layer.The at least one organic layer and the at least one inorganic layer maybe alternately stacked with each other. For example, the thin filmencapsulation layer TFE may include two inorganic layers and one organiclayer therebetween. In an example embodiment, a sealing substrate may beprovided for shielding outside air and moisture from penetrating intothe display apparatus, instead of providing the thin film encapsulationlayer TFE.

According to an example embodiment, in order to form a folding area, aninorganic film may be removed, an electrode may be formed before aninsulating pattern is formed, and an electrode may be configured toapply a ground voltage or a constant voltage to a conductive layerdisposed between the thin film transistor and the base substrate. Insuch a structure, the display quality may be improved.

FIG. 4 is a cross-sectional view illustrating a display apparatusaccording to an example embodiment.

Referring to FIG. 4, the display apparatus is substantially the same asthe display apparatus of FIGS. 1 to 3 except that it further includes asecond conductive layer 103, and the second conductive layer 103 iselectrically connected to an electrode GD. Therefore, a repeatedexplanation may be omitted.

The display apparatus may include a base substrate 100, a conductivelayer 108, a buffer layer 110, an active pattern (ACT), a gateinsulating layer 120, a gate pattern including a gate electrode GE, aninterlayer insulating layer 130, an electrode GD, an insulating pattern135, a data pattern including a wiring GL, a via insulating layer 140, apixel defining layer PDL, and a thin-film encapsulation layer TFE.

The base substrate 100 may include a first polyimide layer 102, a secondconductive layer 103 on the first polyimide layer 102, a barrier filmlayer 104 on the second conductive layer 103, and a second polyimidelayer 106 on the barrier film layer 104. The second conductive layer 103may be an n+ doped amorphous silicon (a-Si) layer like the conductivelayer 108.

In a folding area FA, a contact hole may be formed through theinterlayer insulating layer 130, the gate insulating layer 120, thebuffer layer 110, the conductive layer 108, the second polyimide layer106, the barrier film layer 104, and the second conductive layer 103 toexpose side surfaces of the conductive layer 108 and the secondconductive layer 103.

The electrode GD may be in the contact hole. Thus, the electrode GD maybe in the contact hole that exposes the side surface of the conductivelayer 108 and the side surface of the second conductive layer 103, sothat the side surface of the conductive layer 108 and the side surfaceof the second conductive layer 103 may contact the electrode GD.

In an implementation, the contact hole may be formed only up to thebarrier film layer 104, the second conductive layer 103 may not beremoved, and an upper surface of the second conductive layer 103 maycontact the electrode GD.

FIG. 5 is a cross-sectional view illustrating a display apparatusaccording to an example embodiment.

Referring to FIG. 5, the display apparatus is substantially the same asthe display apparatus of FIGS. 1 to 3 except that the display apparatusincludes a second conductive layer 103 instead of a conductive layer108, and the second conductive layer 103 is electrically connected to anelectrode GD. Therefore, repeated explanation may be omitted.

The display apparatus may include a base substrate 100, a buffer layer110, an active pattern ACT, a gate insulating layer 120, a gate patternincluding a gate electrode GE, an interlayer insulating layer 130, anelectrode GD, an insulating pattern 135, a data pattern including awiring GL, a via insulating layer 140, a pixel defining layer PDL, and athin-film encapsulating layer TFE.

The base substrate 100 may include a first polyimide layer 102, a secondconductive layer 103 on the first polyimide layer 102, a barrier filmlayer 104 on the second conductive layer 103, and a second polyimidelayer 106 on the barrier film layer 104.

In the folding area FA, a contact hole may be formed through theinterlayer insulating layer 130, the gate insulating layer 120, thebuffer layer 110, the second polyimide layer 106, the barrier film layer104, and the second conductive layer 103 to expose the second conductivelayer 103.

The electrode GD may be disposed within the contact hole. Thus, theelectrode GD may be in the contact hole that exposes a side surface ofthe second conductive layer 103, and may contact the side surface of thesecond conductive layer 103.

In an implementation, the contact holes may be formed only up to thebarrier film layer 104, so that the second conductive layer 103 may notbe removed, and an upper surface of the second conductive layer 103 maycontact the electrode GD.

FIG. 6 is a cross-sectional view illustrating a display apparatusaccording to an example embodiment.

Referring to FIG. 6, the display apparatus is substantially the same asthe display apparatus of FIG. 5 except that the display apparatusfurther includes a third conductive layer 105. Therefore, repeatedexplanation may be omitted.

The display apparatus may include a base substrate 100, a conductivelayer 108, a buffer layer 110, an active pattern ACT, a gate insulatinglayer 120, a gate pattern including a gate electrode GE, an interlayerinsulating layer 130, an electrode GD, an insulating pattern 135, a datapattern including a wiring GL, a via insulating layer 140, a pixeldefining layer PDL, and a thin-film encapsulating layer TFE.

The base substrate 100 may include a first polyimide layer 102, a secondconductive layer 103 on the first polyimide layer 102, a barrier filmlayer 104 on the second conductive layer 103, a third conductive layer105 on the barrier film layer 104, and a second polyimide layer 106 onthe third conductive layer 105. The third conductive layer 105 may be ann+ doped amorphous silicon (a-Si) layer like the conductive layer 108.

In the folding area FA, a contact hole may be formed through theinterlayer insulating layer 130, the gate insulating layer 120, thebuffer layer 110, the conductive layer 108, the second polyimide layer106, the third conductive layer 105, the barrier film layer 104, and thesecond conductive layer 103 to expose the second conductive layer 103.

The electrode GD may be disposed within the contact hole. Thus, theelectrode GD may be in the contact hole exposing a side surface of theconductive layer 108, a side surface of the third conductive layer 105,a side surface of the second conductive layer 103 and may contact theside surface of the second conductive layer 103.

In an implementation, the contact hole may be formed only up to thebarrier film layer 104, and the second conductive layer 103 may not beremoved, and an upper surface of the second conductive layer 103 maymake contact the electrode GD.

FIG. 7 is a cross-sectional view illustrating a display apparatusaccording to an example embodiment.

Referring to FIG. 7, the display apparatus is substantially the same asthe display apparatus of FIGS. 1 to 3, except that a third conductivelayer 105 is formed instead of a conductive layer 108, and a contacthole is formed to a portion of the barrier film layer 104. Therefore,repeated explanation may be omitted.

The display apparatus may include a base substrate 100, a buffer layer110, an active pattern ACT, a gate insulating layer 120, a gate patternincluding a gate electrode GE, an interlayer insulating layer 130, anelectrode GD, an insulating pattern 135, a data pattern including awiring GL, a via insulating layer 140, a pixel defining layer PDL, and athin-film encapsulating layer TFE.

The base substrate 100 may include a first polyimide layer 102, abarrier film layer 104 on the first polyimide layer 102, and a thirdconductive layer 105 on the barrier film layer 104, and a secondpolyimide layer 106 on the third conductive layer 105.

In the folding area FA, a contact hole may be formed through theinterlayer insulating layer 130, the gate insulating layer 120, thebuffer layer 110, the second polyimide layer 106, the third conductivelayer 105, and a portion of the barrier film layer 104 to expose a sidesurface of the third conductive layer 105.

The electrode GD may be disposed within the contact hole. Thus, theelectrode GD may be in the contact hole that exposes the side surface ofthe third conductive layer 105, and may contact the side surface of thethird conductive layer 105.

FIG. 8 is a cross-sectional view illustrating a display apparatusaccording to an example embodiment.

Referring to FIG. 8, the display apparatus is substantially the same asthe display apparatus of FIGS. 1 to 3, except for a base substrate 100.Therefore, repeated explanation may be omitted.

The display apparatus may include a base substrate 100, a conductivelayer 108, a buffer layer 110, an active pattern ACT, a gate insulatinglayer 120, a gate pattern including a gate electrode GE, an interlayerinsulating layer 130, an electrode GD, an insulating pattern 135, a datapattern including a drain electrode DE and a wiring GL, a via insulatinglayer 140, a pixel defining layer PDL, and a thin-film encapsulatinglayer TFE.

The base substrate 100 may be made of a transparent or opaque material.For example, the base substrate 100 may be a quartz substrate, asynthetic quartz substrate, a calcium fluoride substrate, afluorine-doped quartz substrate, a sodalime glass substrate, analkali-free non-alkali glass substrates, and the like.

In a peripheral area PA, a contact hole may be formed through theinterlayer insulating layer 130, the gate insulating layer 120, thebuffer layer 110, the conductive layer 108, and a portion of the basesubstrate 100 to expose a side surface of the conductive layer 108.

The electrode GD may be in the contact hole. Thus, the electrode GD maybe in the contact hole that exposes the side surface of the conductivelayer 108, and may contact the side surface of the conductive layer 108.

FIGS. 9A to 9I are cross-sectional views illustrating stages in a methodof forming the display apparatus of FIGS. 1 to 3.

Referring to FIG. 9A, a conductive layer 108 may be formed on a basesubstrate 100. The base substrate 100 may include a first polyimidelayer 102, a barrier film layer 104, and a second polyimide layer 106.The conductive layer 108 may be formed by forming an amorphous silicon(a-Si) layer on the base substrate 100 and then doping with an impurity.For example, the conductive layer 108 may be an n+ doped amorphoussilicon layer.

Referring to FIG. 9B, a buffer layer 110, an active pattern ACT, a gateinsulating layer 120, a gate pattern including a gate electrode GE, andan interlayer insulating layer 130 may be sequentially formed on theconductive layer 108.

For example, the buffer layer 110, the gate insulating layer 120, andthe interlayer insulating layer may be formed by a chemical vapordeposition process, a spin coating process, a plasma enhanced chemicalvapor deposition process, a sputtering process, a vacuum depositionprocess, a high-density plasma-chemical vapor deposition process, aprinting process, or the like.

For example, an amorphous silicon layer may be formed on the bufferlayer 110, and then the amorphous silicon layer may be crystallized toform a polysilicon layer. Then, the active pattern ACT may be formed bypatterning the polysilicon layer by a photolithography method or thelike.

For example, the gate pattern may be formed by forming a conductive filmon the gate insulating layer 120, and patterning the conductive filmusing a photolithography process or an etching process using anadditional etching mask. The conductive layer may be formed using aprinting process, a sputtering process, a chemical vapor depositionprocess, a pulsed laser deposition (PLD) process, a vacuum depositionprocess, an atomic layer deposition (ALD) process, and the like.

Referring to FIG. 9C, a source contact hole SCNT and a drain contacthole DCNT may be formed to expose the active pattern ACT through theinterlayer insulating layer 130 and the gate insulating layer 120.

The source contact hole SCNT and the drain contact hole DCNT may beformed by forming a photoresist layer on the interlayer insulating layer130, and then exposing and developing the photoresist layer to form aphotoresist pattern, and then partially etching the interlayerinsulating layer 130 and the gate insulating layer 120 using thephotoresist pattern as an etching barrier.

Referring to FIG. 9D, a contact hole CNT exposing a side surface of theconductive layer 108 may be formed. For example, portions correspondingto the interlayer insulating layer 130, the gate insulating layer 120,and the buffer layer 110 in the folding are FA which are inorganicinsulation layers may be removed. At this time, a contact hole may beformed through the interlayer insulating layer 130, the gate insulatinglayer 120, the buffer layer 110, the conductive layer 108, and thesecond polyimide layer, where an electrode (refer to GD of FIG. 9E) willbe formed, to expose the side surface of the conductive layer 108.

The contact hole CNT may be formed by forming a photoresist layer on theinterlayer insulating layer 130, exposing and developing the photoresistlayer to form a photoresist pattern, and then partially etching theinterlayer insulating layer 130 and the gate insulating layer 120.

Here, a depth of the contact hole CNT may vary according to the processand the structure of the display apparatus. The depth may be enough toexpose the conductive layer 108 (to expose the second or thirdconductive layer in other embodiments).

The order of forming the contact holes CNT, the source contact holesSCNT, and the drain contact holes DCNT may be changed, or they may beformed simultaneously using a halftone mask or the like.

Referring to FIG. 9E, the electrode GD may be formed in the contact holeCNT to contact the side surface of the conductive layer 108. Theelectrode GD may extend along a side surface of the contact hole CNT andmay extend to an upper surface of the interlayer insulating layer 130for connection with a wiring (refer to GL in FIG. 9G) described below.

Referring to FIG. 9F, an insulating pattern 135 may be formed in thecontact hole CNT on which the electrode GD is formed. The insulatingpattern 135 may be formed to correspond to the portion where theinterlayer insulating layer 130, the gate insulating layer 120, and thebuffer layer 110, which are the inorganic insulation layers, areremoved. The insulating pattern 135 may be formed to reduce a step withthe interlayer insulating layer 130 in the folding area FA. In thedrawing, a step is shown as being formed with the interlayer insulatinglayer 130, but the step may be minimized.

The insulating pattern 135 may expose a portion of the electrode GDformed up to the upper surface of the interlayer insulating layer 130.

Referring to FIG. 9G, a data pattern including a wiring GL, a sourceelectrode SE, and a drain electrode DE may be formed on the insulatingpattern 135 and the interlayer insulating layer 130.

Referring to FIG. 9H, a via insulating layer 140 may be formed on theinterlayer insulating layer 130 on which the data pattern is formed. Apixel contact hole PCNT exposing the drain electrode DE and an openingOP exposing a ground terminal PE_G (which is a portion of the wiring GL)may be formed through the via insulating layer 140.

Referring to FIG. 9I, a light emitting layer 182, a second electrode183, and a thin film encapsulation layer TFE may be formed on the viainsulating layer 140 to form the display apparatus. The first electrode181, the pixel defining layer PDL, the light emitting layer 182, thesecond electrode 183, and the thin film encapsulation layer TFE may beformed through various suitable methods, and the details are omitted.

According to an example embodiment, when the conductive layer 108 isformed and the inorganic insulation layers in the folding area FA areremoved, the contact hole CNT, the electrode GD, the insulating pattern135, and the wiring GL may be formed. Thus, display quality may beimproved by a relatively simple structure and process.

In FIGS. 9A to 9I, the method of manufacturing the display apparatus ofFIGS. 1 to 3 has been described. The display apparatus of FIGS. 4 to 8may be manufactured in a similar manner.

FIG. 10 is a block diagram illustrating an electronic device accordingto an example embodiment. FIG. 11A is a diagram illustrating an examplein which the electronic device of FIG. 10 is implemented as atelevision. FIG. 11B is a diagram illustrating an example in which theelectronic device of FIG. 10 is implemented as a smart phone.

Referring to FIGS. 10 through 11B, the electronic device 500 may includea processor 510, a memory device 520, a storage device 530, aninput/output (I/O) device 540, a power supply 550, and a display device560. The display device 560 may correspond to the display apparatus ofFIG. 1. In addition, the electronic device 500 may further include aplurality of ports for communicating with a video card, a sound card, amemory card, a universal serial bus (USB) device, other electronicdevices, etc. In an example embodiment, as illustrated in FIG. 11A, theelectronic device 500 may be implemented as a television. In anotherexample embodiment, as illustrated in FIG. 11B, the electronic device500 may be implemented as a smart phone. In other examples, theelectronic device 500 may be implemented as a cellular phone, a videophone, a smart pad, a smart watch, a tablet PC, a car navigation system,a computer monitor, a laptop, a head mounted display (HMD), etc.

The processor 510 may perform various computing functions. The processor510 may be a microprocessor, a central processing unit (CPU), anapplication processor (AP), etc. The processor 510 may be coupled toother components via an address bus, a control bus, a data bus, etc.Further, the processor 510 may be coupled to an extended bus such as aperipheral component interconnection (PCI) bus. The memory device 520may store data for operations of the electronic device 500. For example,the memory device 520 may include at least one non-volatile memorydevice such as an erasable programmable read-only memory (EPROM) device,an electrically erasable programmable read-only memory (EEPROM) device,a flash memory device, a phase change random access memory (PRAM)device, a resistance random access memory (RRAM) device, a nano floatinggate memory (NFGM) device, a polymer random access memory (PoRAM)device, a magnetic random access memory (MRAM) device, a ferroelectricrandom access memory (FRAM) device, etc., and/or at least one volatilememory device such as a dynamic random access memory (DRAM) device, astatic random access memory (SRAM) device, a mobile DRAM device, etc.The storage device 530 may include a solid state drive (SSD) device, ahard disk drive (HDD) device, a CD-ROM device, etc. The I/O device 540may include an input device such as a keyboard, a keypad, a mousedevice, a touchpad, a touch-screen, etc., and an output device such as aprinter, a speaker, etc. The power supply 550 may provide power foroperations of the electronic device 500.

The display device 560 may be coupled to other components via the busesor other communication links. In an example embodiment, the displaydevice 560 may be included in the I/O device 540. According to anexample embodiment, the display device 560 may include an electrode in afolding area and to which a ground voltage or a constant voltage isapplied, and a conductive layer electrically connected to the electrodeand overlapping a thin film transistor, so that display quality may beimproved.

Example embodiments may be applied to organic light emitting displaydevices and various electronic devices including the same. For example,example embodiments may be applied to a mobile phone, a smart phone, avideo phone, a smart pad, a smart watch, a tablet PC, a car navigationsystem, a television, a computer monitor, a notebook, and the like.

By way of summation and review, in a display apparatus that includes athin film transistor, when characteristics of the thin film transistor(such as the threshold voltage Vth) change depending on externalfactors, the display quality may be degraded.

As described above, example embodiments relate to a display apparatusthat may exhibit improved display quality, and a method of manufacturingthe display apparatus.

Example embodiments may provide a display apparatus capable of improvingdisplay quality by stabilizing characteristics of the thin filmtransistor.

According to an example embodiment, in order to form a folding area, aninorganic film is removed, an electrode is formed before an insulatingpattern is formed, and the electrode is configured to apply a groundvoltage or a constant voltage to a conductive layer disposed between athin film transistor and a base substrate. Therefore, the displayquality may be improved.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. A method of manufacturing a display apparatus,the method comprising: forming a conductive layer on a base substrate;forming a buffer layer on the conductive layer; forming an activepattern on the buffer layer; forming an insulating layer on the activepattern; forming a contact hole by partially removing the insulatinglayer and the buffer layer to expose the conductive layer; forming anelectrode that contacts the conductive layer in the contact hole;forming an insulating pattern on the electrode so as to expose a portionof the electrode; and forming a wiring electrically connected to theelectrode on the insulating pattern.
 2. The method as claimed in claim1, wherein the conductive layer is an n+ doped amorphous silicon layer.3. The method as claimed in claim 1, further comprising: forming a gateelectrode on the insulating layer before forming the contact hole; andforming an interlayer insulating layer on the gate electrode, wherein informing the contact hole, the contact hole is formed by partiallyremoving the interlayer insulating layer, the insulating layer, and thebuffer layer.
 4. The method as claimed in claim 1, wherein in formingthe contact hole, a portion of the conductive layer is removed to formthe contact hole, and the side surface of the conductive layer isexposed, and the side surface of the conductive layer contacts theelectrode.
 5. The method as claimed in claim 1, wherein the basesubstrate includes at least one polyimide layer and at least one barrierfilm layer.